Thermoelectric properties of the 0.05 wt.% SbI3-Doped n-Type Bi2(Te0. 95Se0. 05)3 alloy fabricated by the hot pressing method |
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| Authors: | Sun Kyung Lee Tae Sung Oh Dow Bin Hyun Chang Won Hwang |
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| Affiliation: | (1) Department of Metallurgical Engineering and Materials Science, Hong Ik University, 72-1 Sangsu-dong, Mapo-ku, 121-791 Seoul, Korea;(2) Center for Metals Processing, Korea Institute of Science and Technology, 39-1 Haweolkok-dong, Seongbuk-ku, 136-791 Seoul, Korea;(3) Thermotek Ltd., 45-10 Nowon-ree, Eawall-myon, Jinchun-gun, 365-820 Choongbook, Korea |
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| Abstract: | Thermoelectric properties of the 0.05 wt.% SbI3-doped n-type Bi2(Teo.95Seo.o5)3 alloy, fabricated by hot pressing at temperatures ranging from 350°C to 550°C, were characterized. The electron concentration
of the alloy decreased as the hot pressing temperature increased due to the annealing-out of the excess Te vacancies. When
hot pressed at 350°C, a figure-of-merit of 0.75x10-3/K was obtained due to the low Seebeck coefficient of -145 μV/K and relatively high electrical resistivity of 2.05 mΩ-cm.
Upon increasing the hot pressing temperature, however, the figure-of-merit was improved mainly due to the increase of the
Seebeck coefficient. A maximum figure-of-merit of 2.1x10-3/K was obtained by hot pressing at 550°C. |
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| Keywords: | bismuth telluride thermoelectric properties Peltier cooling figure-of-merit hot pressing |
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