Density measurement of amorphous SixGe1 − x alloys期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Density measurement of amorphous Si_xGe_{1 − x} alloys

Authors:	K. Laaziri S. Roorda L. Cliche

Affiliation:	Groupe de recherche en physique et technologie des Couches Minces, Département de physique, Université de Montréal C.P 6128 succ. A, Montréal, Québec H3C 3J7, Canada

Abstract:	The atomic density of amorphous Si_xGe_{1 − x} alloys (x = 1, 0.85, 0.67, 0.50, 0.20 and 0) has been measured. Mono-crystalline Si_xGe_1−x layers Were implanted with 1.50–2.75 MeV Si²⁺ and Ge²⁺ ions to produce the amorphous material. Using surface profilometry and RBS/channeling, it was found that amorphous alloys are less dense than the crystalline alloys, and that Vegard's law underestimates the a-Si_xGe_1−x density.

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