| Cu(In1-xGax)Se2薄膜太阳电池的J-V特性 |
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| 引用本文： | 何炜瑜,孙云,乔在祥,敖建平,王兴磊,李长健. Cu(In1-xGax)Se2薄膜太阳电池的J-V特性[J]. 半导体学报, 2007, 28(12): 1941-1944 |
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| 作者姓名： | 何炜瑜 孙云 乔在祥 敖建平 王兴磊 李长健 |
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| 作者单位： | 南开大学光电子薄膜器件与技术天津市重点实验室光电信息技术重点实验室（南开大学天津大学）,天津300071 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 对Cu（In1-xGax）Se2（CIGS）太阳电池J-V特性曲线进行了测试和分析,采用Matlab软件进行计算,得到电池的二极管品质因子、反向饱和电流密度、串联电阻、并联电阻等特性参数，采用数值逼近法,将得到的参数回归J-V方程,与测试结果符合较好，对不同光照强度下电池的特性参数进行计算,发现并联电阻随光照强度增加而降低,并分析了原因。
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| 关 键 词： | Cu（In1-xGax）Se2 太阳电池 并联电阻 晶界势垒 弱光 |
| 文章编号： | 0253-4177(2007)12-1941-04 |
| 修稿时间： | 2007-07-12 |
J-V Characteristics of Cu(In1-xGax)Se2 Thin Film Solar Cells |
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| He Weiyu,Sun Yun,Qiao Zaixiang,Ao Jianping,Wang Xinglei and Li Changjian. J-V Characteristics of Cu(In1-xGax)Se2 Thin Film Solar Cells[J]. Chinese Journal of Semiconductors, 2007, 28(12): 1941-1944 |
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| Authors: | He Weiyu Sun Yun Qiao Zaixiang Ao Jianping Wang Xinglei Li Changjian |
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| Affiliation: | Institute of Photo-Electronics,Nankai University,Tianjin 300071,China;Institute of Photo-Electronics,Nankai University,Tianjin 300071,China;Institute of Photo-Electronics,Nankai University,Tianjin 300071,China;Institute of Photo-Electronics,Nankai University,Tianjin 300071,China;Institute of Photo-Electronics,Nankai University,Tianjin 300071,China;Institute of Photo-Electronics,Nankai University,Tianjin 300071,China |
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| Abstract: | J-V characteristics of Cu(In1-xGax)Se2 (CIGS) thin film solar cells are measured and analyzed.The diode saturation current density J0,diode quality factor A,series resistance Rs and shunt resistance rsh are deduced using Matlab.The calculated results coincide with the measurement very well.A CIGS cell produced in our laboratories is characterized at different illumination intensities.The calculated characteristic parameters are plotted with the irradiance.The shunt resistance rsh decreases as illumination increases.The increased shunt resistance is most likely one of the reasons for the better performance of CIGS solar cells under week illumination. |
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| Keywords: | Cu(In1-xGax)Se2 solar cells shunt resistance grain boundary barrier weak illumination |
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