Interfacial Reactions between Sapphire and Silver—Copper—Titanium Thin Film Filler Metal |
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| Authors: | Seiichi Suenaga Masako Nakahashi Miho Maruyama Takayuki Fukasawa |
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| Affiliation: | Materials and Devices Research Laboratories, Toshiba Corporation, Kawasaki 210, Kanagawa, Japan |
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| Abstract: | Wetting and brazing studies of sputtering-deposited, submicrometer thin film filler metal in an Ag—Cu—Ti/Al2O3 system were performed. The interfacial reaction layer between the filler metal and Al2O3 was investigated. It is possible to make a brazing joint even with a reaction layer of less than 100 nm thickness. Different types of interfacial reaction layers were observed when the Ti content in the filler metal was varied. The Cu—Ti—O system compounds were observed in the samples with high wetting capabilities, but not in the sample with low wetting characteristics. It was found that these compounds are substances that promote effective brazing. |
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