| 新型光电探测器及其填充系数的确定 |
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| 引用本文： | 曾云,金湘亮,胡磊,王太宏. 新型光电探测器及其填充系数的确定[J]. 光电工程, 2007, 34(7): 76-79 |
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| 作者姓名： | 曾云 金湘亮 胡磊 王太宏 |
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| 作者单位： | 湖南大学,微电子研究所,湖南,长沙,410082;中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 详细分析了用于CMOS图像传感器的新型半导体光电器件的工作原理和光电特性,建立解析模型确定由其构成的像素单元的填充系数,优化光电响应特性.由于引入PN注入结,新型光电器件沟道电流同时存在电子电流和空穴电流,提高了器件的响应灵敏度,避免了大的寄生电容,提高了信噪比.
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| 关 键 词： | 光电探测器 CMOS图像传感器 填充系数 |
| 文章编号： | 1003-501X（2007）07-0076-04 |
| 收稿时间： | 2006-09-09 |
| 修稿时间： | 2006-09-092007-05-10 |
Confirmation of new photodetector and its fill factor |
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| ZENG Yun,JIN Xiang-liang,HU Lei,WANG Tai-hong. Confirmation of new photodetector and its fill factor[J]. Opto-Electronic Engineering, 2007, 34(7): 76-79 |
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| Authors: | ZENG Yun JIN Xiang-liang HU Lei WANG Tai-hong |
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| Affiliation: | Institute ofMicroelectronics, Hunan University, Changsha 410082, China; Institute of Microelectronics, the Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | The operating principle and photoelectric characteristics of a new photodetector for CMOS image sensor was analyzed in detail. An analytical expression was presented to confirm the fill factor of the pixel and make the photo response optimization based on the new photodetector. Due to the introduced PN junction, the photocurrent is made up by both electronic and pole, As a result, the sensitivity and signal to noise ratio are increased, the parasitic capacitance is decreased. |
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| Keywords: | photo detector CMOS image sensor fill factor. |
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