Deposition of heteroepitaxial layers of topological insulator Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> in the trimethylbismuth–isopropylselenide–hydrogen system on the (0001) Al<Subscript>2</Subscript>O<Subscript>3</Subscript> and (100) GaAs substrates 期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Deposition of heteroepitaxial layers of topological insulator Bi2Se3 in the trimethylbismuth–isopropylselenide–hydrogen system on the (0001) Al2O3 and (100) GaAs substrates

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