940 nm高功率半导体激光器研究

报道了一种采用大光学腔结构的InGaAs/GaAs/AlGaAs应变量子阱高功率半导体激光器。在量子阱能级本征值方程的数值求解基础上 ,优化了InGaAs阱层材料的In组份含量 ;采用大光学腔结构以有效降低垂直于结平面方向的光束发散角及腔面的光功率密度 ,实现器件的高功率、低发散角光。设计的激光器外延结构采用分子束外延 (MBE)方法生长 ,成功获得具有较低激射阈值的 94 0nm波长激光器外延片。对 10 0 μm条形 ,10 0 0 μm腔长的制备器件测试表明 ,器件的最大连续输出功率达到 2W ,峰值波长为 939.4nm ,远场水平发散角为 10° ,垂直发散角为 30°。器件的阈值电流为 30 0mA。

940 nm High Power Semiconductor Laser

InGaAs/GaAs/AlGaAs material high power diode lasers with large optical cavity (LOC) have been reported. Based on the solution to the intrinsic equation of quantum well energy level, In content of the InGaAs quantum well layer was optimized; the output beam divergence and optical power density on facets were reduced effectively by using LOC structure for high power, low beam divergence output. The designed 940 nm wavelength laser structure has been obtained by successful molecular beam epitaxy (MBE) growth with a low threshold current. The finally prepared devices reached up to 2 W power output with a low threshould current of 300 mA. The beam divergence of θ∥ and θ⊥ is 10° and 30° respectively and the peak wavelength of the lasing devices is 939.4 nm.