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Effect of fabrication parameters on the microstructure,in-plane anisotropy and magnetostriction of Fe-Ga thin films |
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| Authors: | Bowen Wang Wenmei Huang Shuying Cao Yong Du Yuehui He Baiyun Huang |
| Affiliation: | 1. Province-Ministry Joint Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability, Hebei University of Technology, Tianjin 300130, China;International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110015, China 2. Province-Ministry Joint Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability, Hebei University of Technology, Tianjin 300130, China 3. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China |
| Abstract: | The microstructure, in-plane anisotropy, and magnetic properties of Fe-Ga thin films were investigated by X-ray diffraction analysis, vibrating sample magnetometer, and capacitive cantilever method. The in-plane induced anisotropy is well formed by the applied magnetic field during sputtering, and the anisotropy field H k decreases with the sputtering power increasing. The coercivity of Fe-Ga thin films decreases with increasing power when the sputtering power is less than 60 W and increases when the power is larger than 60 W. The magnetostriction of the thin films reaches 66 × 10−6 at the sputtering power of 60 W. Excellent Fe-Ga films, which exhibit good field sensitivity, low coercivity and high magnetostriction, have been fabricated at the power of 60 W, and they can be used as the materials of magnetostrictive transducers. |
| Keywords: | metallic thin films magnetostriction magnetron sputtering anisotropy |
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