25 Gbit/s selector module using 0.2 mu m GaAs MESFET technology |
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| Authors: | Ohhata M Togashi M Murata K Yamaguchi S |
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| Affiliation: | NTT LSI Labs., Kanagawa, Japan; |
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| Abstract: | A high-speed selector module has been developed. It is constructed from a selector IC mounted in a ceramic package, a power supply unit, phase shifters, and coaxial cables. The IC was designed using LSCFL and fabricated with 0.2 mu m gate length GaAs MESFETs. The selector module operated above 25 Gbit/s. It is expected to be applied to high-speed IC measurements.<> |
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