Resistive switching via the converse magnetoelectric effect in ferromagnetic multilayers on ferroelectric substrates |
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Authors: | Pertsev N A Kohlstedt H |
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Affiliation: | Nanoelektronik, Technische Fakult?t, Christian-Albrechts-Universit?t zu Kiel, Kiel, Germany. pertsev.domain@mail.ioffe.ru |
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Abstract: | A voltage-controlled resistive switching is predicted for ferromagnetic multilayers and spin valves mechanically coupled to a ferroelectric substrate. The switching between low- and high-resistance states results from the strain-driven magnetization reorientations by about 90°, which are shown to occur in ferromagnetic layers with a high magnetostriction and weak cubic magnetocrystalline anisotropy. Such reorientations, not requiring external magnetic fields, can be realized experimentally by applying moderate electric field to a thick substrate (bulk or membrane type) made of a relaxor ferroelectric having ultrahigh piezoelectric coefficients. The proposed multiferroic hybrids exhibiting giant magnetoresistance may be employed as electric-write nonvolatile magnetic memory cells with nondestructive readout. |
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