Mechanisms and kinetics of vapor-phase etching of GaAs and GaP

Vapor-phase etching of (111), (111), (110) GaAs and (111), (111) GaP wafer in H₂ + HBr or H₂ + PBr₃ gas mixtures has been conducted. The results of two cases, with liquid-forming metal (gold) layers or without coatings, are compared. Etching rates as a function of temperature in the range of 600? to 950? C were measured in Arrhenius coordinates. For both materials and for different gas environments, low-, medium- and high-temperature regions are distinguished, the activation energies in the low-temperature region (below about 650?c) being quite different for the two cases. The kinetic results are correlated with morphological changes arising from temperature variations. Some conclusions are made about the mechanisms of chemical vaporization in various temperature regions. The vaporization mechanisms have much in common with those for A^II - B^VI compounds.