Vapor pressures of Y, Ba, Cu precursors for the growth of YBa2Cu3O7 by MOVPE |
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Authors: | E Waffenschmidt J Musolf M Heuken and K Heime |
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Affiliation: | (1) Institut für Halbleitertechnik, Lehrstuhl I, RWTH Aachen, Germany |
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Abstract: | The vapor pressures of the -diketonates Y(THD), Ba(THD), and Cu(THD), commonly used as precursors for MOVPE of YBa2Cu3O7, and Y(MCP) were measured at different temperatures. A time-resolved static method recording the pressure vs. time at constant temperature was used, permitting us to deduce the vapor pressure even if the materials tend to decompose. The values of the constants of the Clausius-Clapeyron equation log10p(T)/p
0=A-B/T are,A=11.7, 8.7, 8.27, 16.6 andB=4359, 2654, 3602, and 6453 K for Y(THD), Y(MCP), Ba(THD), and Cu(THD), respectively withp
0= 1 Pa and temperatureT in K. The thermal stability of the sources was measured and are discussed. |
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Keywords: | YBa2Cu3O7 MOVPE vapor pressures -diketonates" target="_blank">gif" alt="beta" align="MIDDLE" BORDER="0">-diketonates |
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