退火温度对ZrO_2高介电薄膜电学性能的影响

利用反应磁控溅射法沉积了ZrO2介电薄膜,研究了退火温度对ZrO2介电薄膜电学性能的影响,并对漏电流最小的样品的漏电流机制进行了分析。结果表明,随着退火温度的升高,漏电流先减小后增大,退火温度为300℃时所制备薄膜的漏电流最小,当所加电压为–1.4 V时,漏电流密度为8.32×10–4 A/cm2。当所加正偏压为0-0.8 V和0.8-4.0 V时,该样品的漏电流主导机制分别为肖特基发射和直接隧穿电流;当所加负偏压为–1.7-0 V和–4.0-–1.7 V时,其主导机制分别为肖特基发射和空间电荷限制电流。

Effects of annealing temperature on the electrical properties of ZrO2 high permittivity films

The zirconium oxide films were deposited by reactive magnetron sputtering,and the effects of annealing temperature on the electrical properties of ZrO2 films were studied.The leakage current mechanism of sample with the lowest leakage current was analyzed.The results show that with the increasing of annealing temperature,the leakage current density initially decreases,and then increases.The film annealed at 300 ℃ possesses the lowest leakage current density of 8.32×10–4 A/cm2 as the applied voltage of –1.4 V.When the positive bias is 0-0.8 V and 0.8-4.0 V,the major leakage current mechanism is Schottky launching and direct tunnelling current respectively;while the negative bias is –1.7-0 V and –1.7-–4.0 V,the major leakage current mechanism is Schottky launching and space charge limiting current respectively.