| 预烧温度对PZN-PZT压电陶瓷电性能的影响 |
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| 引用本文： | 沈小婷,范桂芬,王允祺,吕文中.预烧温度对PZN-PZT压电陶瓷电性能的影响[J].电子元件与材料,2012(10):1-4. |
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| 作者姓名： | 沈小婷 范桂芬 王允祺 吕文中 |
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| 作者单位： | 华中科技大学电子科学与技术系 |
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| 基金项目： | 中央高校基本科研业务基金资助项目(No.2010MS006);高等学校博士学科点专项科研基金资助项目(No.20100142120091) |
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| 摘 要： | 采用传统固相法制备了化学计量比为0.3Pb(Zn1/3Nb2/3)O3-0.35PbTiO3-0.35PbZrO3的压电陶瓷,研究了所制陶瓷的预合成温度对其微观结构和压电介电性能的影响。结果显示,当预合成温度大于800℃时可以获得纯钙钛矿相,低于800℃钙钛矿主晶相不明显且有很多杂相产生。当预烧温度为775℃时,经1 125℃保温3 h烧结的陶瓷具有最佳综合性能:d33=431 pC/N、k31=0.36、Ec=9.98×103 V/mm、Pr=22.52×10–6 C/cm2、εr=1 874、tanδ=0.024、ρ=7.88 g/cm3。
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| 关 键 词： | 压电陶瓷 PZN-PZT 预烧温度 |
Effect of the calcining temperature on piezoelectric ceramics of PZN-PZT |
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| Affiliation: | SHEN Xiaoting,FAN Guifen,WANG Yunqi,Lü Wenzhong(Department of Electronic Science and Technology,Huazhong University of Science and Technology,Wuhan 430074,China) |
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| Abstract: | The 0.3Pb(Zn1/3Nb2/3)O3-0.35PbTiO3-0.35PbZrO3 piezoelectric ceramics were prepared by conventional solid-state reaction method.The effects of calcining temperatures on microstructure,piezoelectric and dielectric properties of prepared ceramics were investigated.The results show that the lowest synthesized temperature is 800 ℃,below which the samples contain impurity phases.Moreover,when calcined at 775 ℃ and sintered at 1 125 ℃,the samples show the best comprehensive properties: d33=431 pC/N,k31=0.36,Ec=9.98×103 V/mm,Pr =22.52×10–6 C/cm2,εr=1 874,tanδ=0.024,ρ=7.88 g/cm3,respectively. |
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| Keywords: | piezoelectric ceramics PZN-PZT calcining temperature |
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