| ZnO:Ag薄膜的制备及其光学性能研究 |
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| 引用本文： | 朱慧群,黄洁芳.ZnO:Ag薄膜的制备及其光学性能研究[J].电子元件与材料,2012(8):22-24. |
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| 作者姓名： | 朱慧群 黄洁芳 |
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| 作者单位： | 五邑大学应用物理与材料学院 |
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| 基金项目： | 广东省自然科学基金资助项目(No.10152902001000025);广东省科技计划资助项目(No.2009B010800012);江门市自然科学和基础科学领域科技攻关计划资助项目(No.江科[2009]38号);五邑大学重点科研项目资助 |
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| 摘 要： | 采用蒸镀与氧化二步法,以高纯混合金属Zn:Ag作蒸发源,在石英衬底上沉积Zn:Ag金属薄膜,经不同热氧化处理生长Ag掺杂ZnO薄膜。结果显示,以Ag含量为质量分数3%的蒸发源沉积的Zn:Ag薄膜经500℃氧化后,生成的ZnO:Ag薄膜在380 nm附近出现很强的近带边紫外发光峰,在438~470 nm附近出现较弱的深能级缺陷发光峰,该薄膜在360 nm有接近垂直的吸收边,其载流子浓度为1.810×1021cm–3,表现出p型导电特性和较好的光学质量。
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| 关 键 词： | Ag掺杂 ZnO 热蒸发 光学性能 |
Study on preparation and optical properties of ZnO:Ag thin films |
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| ZHU Huiqun,HUANG Jiefang.Study on preparation and optical properties of ZnO:Ag thin films[J].Electronic Components & Materials,2012(8):22-24. |
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| Authors: | ZHU Huiqun HUANG Jiefang |
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| Affiliation: | (School of Applied Physics and Materials,Wuyi University,Jiangmen 529020,Guangdong Province,China) |
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| Abstract: | Ag-doped ZnO thin films were grown on SiO2 substrates using Zn:Ag mixed metal as the evaporation source by thermal evaporation combing post thermal oxidation.The ZnO:Ag thin film which was prepared by Zn:Ag(w(Ag)=3%) metal thin film annealed at 500 ℃ shows very strong near band-edge UV emission peak at 380 nm and some weak deep level defect irradiance peaks at 438-470 nm.The absorption spectrum of the film possesses a near-vertical absorption edge at 360 nm,and its carrier concentration is 1.810×1021 cm-3.The ZnO:Ag thin film successfully becomes p-type conductivity in ZnO and exhibits good optical properties. |
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| Keywords: | Ag-doped ZnO thermal evaporation optical properties |
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