| ZnO过渡层对BiFeO_3薄膜铁电性能的影响 |
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| 引用本文： | 王贵,陈长春,高虹.ZnO过渡层对BiFeO_3薄膜铁电性能的影响[J].电子元件与材料,2012(9):16-18,22. |
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| 作者姓名： | 王贵 陈长春 高虹 |
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| 作者单位： | 南京工业大学材料科学与工程学院 |
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| 基金项目： | 南京工业大学材料化学工程国家重点实验室自主研究课题资助 |
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| 摘 要： | 采用溶胶–凝胶法,在Pt(111)/Ti/SiO2/Si(100)衬底上采用逐层退火工艺制备了BFO(BiFeO3)、ZnO/BFO和ZAO(掺铝氧化锌)/BFO薄膜,研究了ZnO、ZAO过渡层对BFO薄膜晶相以及铁电、漏电和介电性能的影响。结果表明:与BFO薄膜相比,ZnO/BFO薄膜的表面更加致密、平整,结晶性更好,双剩余极化强度(2Pr)有非常大的提高,漏电和介电性能也均有改善。ZAO/BFO薄膜的铁电性能比ZnO/BFO薄膜的铁电性能差,这与ZAO的导电性强于ZnO有关。
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| 关 键 词： | 溶胶–凝胶法 铁电性能 BiFeO3薄膜 ZnO过渡层 |
Effects of ZnO buffer layer on the ferroelectric properties of BiFeO3 thin films |
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| WANG Gui,CHEN Changchun,GAO Hong.Effects of ZnO buffer layer on the ferroelectric properties of BiFeO3 thin films[J].Electronic Components & Materials,2012(9):16-18,22. |
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| Authors: | WANG Gui CHEN Changchun GAO Hong |
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| Affiliation: | (College of Materials Science and Engineering,Nanjing University of Technology,Nanjing 210009,China) |
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| Abstract: | BFO(BiFeO3),ZnO/BFO and ZAO(Al doped ZnO)/BFO thin films were deposited on the Pt(111)/Ti/SiO2/Si(100) substrates by the sol-gel method and the step-annealing technique.The effects of ZnO and ZAO buffer layers on the crystalline phases,ferroelectric properties,dielectric properties and the leakage current characteristics of the BFO films were studied.The results show that: compared with the BFO films,the ZnO/BFO films show a denser and smoother surface,higher degree of crystallization,larger double-remanent-polarization value,and improved dielectric properties and leakage current characteristics.The ferroelectric properties of the ZAO/BFO thin films is inferior to that of the ZnO/BFO thin films,probably attributed to that the ZAO thin film is more conductive than the ZnO thin film. |
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| Keywords: | sol-gel method ferroelectric properties BiFeO3 films ZnO buffer layer |
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