| Au/STO/Pt三明治结构阻变存储器性质研究 |
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| 引用本文： | 史自鸿,孙献文,丁玲红,张伟风. Au/STO/Pt三明治结构阻变存储器性质研究[J]. 电子元件与材料, 2012, 0(8): 25-28 |
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| 作者姓名： | 史自鸿 孙献文 丁玲红 张伟风 |
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| 作者单位： | 河南大学物理与电子学院光伏材料省重点实验室 |
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| 基金项目： | 国家自然科学基金资助项目(No.60976016) |
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| 摘 要： | 采用脉冲激光沉积法(PLD)在Pt衬底(Pt/TiO2/SiO2/Si)上制备了SrTiO3(STO)薄膜,并对其表面特性,表面组成和结构进行了研究分析。在此基础上制备了具有三明治结构的Au/STO/Pt阻变器件,并测试了其I-V特性。结果显示:空间电荷限制电流(SCLC)机制对SrTiO3薄膜中氧空位的运输起了决定作用;薄膜界面缺陷对载流子的俘获与去俘获导致了SrTiO3薄膜I-V特性的产生。
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| 关 键 词： | SrTiO3(STO)薄膜 双极性电阻开关 氧空位 |
Study on the properties of Au/STO/Pt resistance random access memory with a sandwich structure |
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| SHI Zihong,SUN Xianwen,DING Linghong,ZHANG Weifeng. Study on the properties of Au/STO/Pt resistance random access memory with a sandwich structure[J]. Electronic Components & Materials, 2012, 0(8): 25-28 |
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| Authors: | SHI Zihong SUN Xianwen DING Linghong ZHANG Weifeng |
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| Affiliation: | (Key Laboratory of Photovoltaic Materials of Henan Province,School of Physics and Electronics,Henan University,Kaifeng 475004,Henan Province,China) |
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| Abstract: | SrTiO3(STO) thin film was deposited on a Pt(Pt/TiO2/SiO2/Si) substrate by the pulsed laser deposition(PLD) method.The surface morphology,surface composition and crystal structure of the prepared film were studied.An Au/STO/Pt resistive switching device with a sandwich structure was then fabricated and the I-V characteristic of the device was investigated.The results show that the oxygen vacancy movement in the STO film is controlled by the space-charge-limited current(SCLS) mechanism,and the I-V characteristic of the STO film is a result of electron trapping and releasing within the interface. |
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| Keywords: | SrTiO3(STO) thin films bipolar resistive switching oxygen vacancy |
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