Improved oxidation procedures for reduced SiO2/SiC defects |
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Authors: | L A Lipkin J W Palmour |
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Affiliation: | (1) Crée Research, Inc., 4022 Stirrup Creek Dr. #322, 27713 Durham, NC |
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Abstract: | A significant reduction in the effective oxide charge and interface state densities in oxides grown on p-type 6H-SiC has been
obtained by lowering the oxidation temperature of SiC to 1050°C. Further improvements are obtained by following the oxidation
with an even lower temperature re-oxidation anneal. This anneal dramatically improves the electrical properties of the Si/SiC
interface, and substantially lowers the interface state density. The net oxide charge density on p-type 6H-SiC is also lowered
significantly, but remains quite high, at 1.0 × 1012 cm-2. The interface state densities of 1.0 × 1011 cnr−2/eV are approaching acceptable MOS device levels. The breakdown fields of the oxides are also substantially improved by both
the lower oxidation temperature and re-oxidation anneal. Using a low temperature oxidation followed by a re-oxidation anneal
for MOSFETs results in a room temperature mobility of 72 cm2/V-s, the highest channel mobility reported for SiC MOSFETs to date. |
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Keywords: | Interface quality metal oxide semiconductor (MOS) oxidation SiC SiO2 |
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