Comparative study of low-threshold 1.3 μm strained andlattice-matched quantum-well lasers |
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| Authors: | Mathur A. Osinski J.S. Grodzinski P. Dapkus P.D. |
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| Affiliation: | Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA; |
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| Abstract: | A study of the effects of biaxial strain on the performance of low-threshold 1.3-μm InxGa1-xAsyP 1-y/InP quantum-well lasers is presented. Lasers with lattice-matched, compressive-strained, and tensile-strained quantum-wells were fabricated to compare the effect of strain on various device parameters. Threshold current densities as low as 187 A/cm2 for a two-quantum-well device with 0.85% compressive strain were obtained |
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