An experimental method for calibration of the plasmon mean free path |
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Authors: | H MELTZMAN Y KAUFFMANN P THANGADURAI M DROZDOV M BARAM D BRANDON WD KAPLAN |
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Affiliation: | Department of Materials Engineering, Technion – Israel Institute of Technology, Haifa 32000, Israel |
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Abstract: | Transmission electron microscopy specimens in the form of elongated, conical needles were made using a dual‐beam focused ion beam system, allowing the specimen thickness to be geometrically determined for a range of thickness values. From the same samples electron energy loss maps were acquired and the plasmon mean free path (λ) for inelastic scattering was determined experimentally from the measured values of specimen thickness. To test the method λ was determined for Ni (174 ± 17 nm), α‐Al2O3 (143 ± 14 nm), Si (199 ± 20 nm) and amorphous SiO2 (238 ± 12 nm), and compared both to experimental values of λ taken from the literature and to calculated values. The calculated values of λ significantly underestimate the true sample thickness for high accelerating voltages (300 kV) and large collection angles. A linear dependence of λ on thickness was confirmed for t/λ < 0.5–0.6, but this method also provides an approach for calibrating λ at sample thicknesses for which multiple scattering occurs, thus expanding the thickness range over which electron energy loss spectroscopy can be used to determine the absolute sample thickness (t/λ > 0.6). The experimental method proposed in this contribution offers a means to calibrate λ for any type of material or phase that can be milled using a focused ion beam system. |
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Keywords: | Al2O3 EELS inelastic mean free path log‐ratio method Ni plasmons Si SiO2 thickness measurement |
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