| Affiliation: | 1.Department of Electrical Engineering and Stanford SystemX Alliance,Stanford University,Stanford,USA;2.GigaDevice Semiconductor Inc.,Beijing,China;3.Laboratorio MDM, IMM-CNR,Agrate Brianza,Italy;4.Department of Electronics Engineering and Institute of Electronics,National Chiao Tung University,Hsinchu,Taiwan;5.Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics, Chinese Academy of Science,Beijing,China;6.CEA Leti,Grenoble,France |
| Abstract: | Emerging non-volatile memory technologies are promising due to their anticipated capacity benefits, non-volatility, and zero idle energy. One of the most promising candidates is resistive random access memory (RRAM) based on resistive switching (RS). This paper reviews the development of RS device technology including the fundamental physics, material engineering, three-dimension (3D) integration, and bottom-up fabrication. The device operation, physical mechanisms for resistive switching, reliability metrics, and memory cell selector candidates are summarized from the recent advancement in both industry and academia. Options for 3D memory array architectures are presented for the mass storage application. Finally, the potential application of bottom-up fabrication approaches for effective manufacturing is introduced. |
