Ferromagnetic Resonance and Hall Effect Characterization of GaMnSb Layers |
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Authors: | N A Sobolev M A Oliveira R M Rubinger A J Neves M C Carmo V P Lesnikov V V Podolskii Y A Danilov E S Demidov G N Kakazei |
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Affiliation: | (1) I3N and Departamento de Física, Universidade de Aveiro, 3810-193 Aveiro, Portugal;(2) Physico-Technical Research Institute, Nizhny Novgorod State University, 603950 Nizhny Novgorod, Russia;(3) Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain;(4) Institute of Magnetism NAS of Ukraine, 36b Vernadskogo Blvd., 03142 Kiev, Ukraine |
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Abstract: | The electrical and magnetic properties of GaSb:Mn layers deposited on (100)GaAs substrates from a laser plasma in vacuum have
been studied. It is shown that the films deposited at 200–440 °C are mosaic single crystalline and epitaxial to the substrate,
with p-type conduction. Manganese-doped layers had a hole concentration higher than 1×1019 cm−3 and fairly high values of mobility (up to 40 cm2/V s at 300 K). The layers grown at 200 °C exhibited an anomalous Hall effect up to approximately room temperature. On the
contrary, a normal Hall effect was observed in the layers grown at 440 °C. Ferromagnetic resonance measurements have revealed
the existence of ferromagnetism in the sample grown at 200 °C. The transition temperature is close to room temperature, in
full agreement with the Hall data. In the sample grown at 440 °C, the formation of ferromagnetic clusters has tentatively
been concluded. |
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Keywords: | Diluted magnetic semiconductors GaMnSb Ferromagnetic resonance Hall effect |
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