Preparation and characterization of thin films of MgO,Al2O3 and MgAl2O4 by atomic layer deposition |
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| Authors: | Ron Huang Adrian H Kitai |
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| Affiliation: | (1) Department of Material Science and Engineering, McMaster University, L8S 4M1 Hamilton, Ontario, Canada;(2) Department of Engineering Physics and Material Science and Engineering, McMaster Uiniversity, L8S 4M1 Hamilton, Ontario, Canada |
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| Abstract: | MgO, Al2O3 and MgAl2O4 thin films were deposited on silicon substrates at various temperatures by the atomic layer deposition (ALD) method using
bis(cyclopentadienyl)magnesium, triethylaluminum, and H2O and were characterized systematically. High-quality polycrystalline MgO films were deposited for a substrate temperature
above 500°C, and amorphous thin films were deposited around 400°C. The deposited Al2O3 and MgAl2O4 thin films were characterized as amorphous in structure. Applicability of ALD to complex oxides is discussed. |
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| Keywords: | Atomic layer deposition MgO Al2O3 MgAl2O4 thin films |
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