Preparation and properties of transparent conductive N-doped CuAlO2 films using N2O as the N source |
| |
Authors: | Jiaqi Pan Wei Lan Hongquan Liu Yingzhuo Sheng Boxue Feng Xin Zhang Erqing Xie |
| |
Affiliation: | 1. School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People’s Republic of China 2. Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou, 730000, People’s Republic of China 3. Institute of North Electronic Equipment, Beijing, 100083, People’s Republic of China
|
| |
Abstract: | N-doped CuAlO2 films were prepared by RF magnetron sputtering on quartz substrates using N2O as the N source. N concentration in the films is detected by Auger electron spectroscopy in detail, which confirms that N is indeed incorporated into the films. The optical and electrical properties of transparent conductive N-doped CuAlO2 films are modulated by the N2O flow ratio in sputtering gas. The N-doped films have a visible transmittance of 60–70 % and a high infrared transmittance of ~85 %. The film deposited by using 15 % N2O flow ratio with the optimal crystalline is provided with a conductivity of 3.75 × 10?2 S cm?1 at room temperature, which improves over one order of magnitude compared with the undoped film. The enhanced conductive property is mainly originated from the ionization of acceptor impurities. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|