| 结构函数法评估漏源电压对AlGaAs/InGaAs PHEMTs热阻的影响 |
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| 引用本文： | 马琳,冯士维,张亚民,邓兵,岳元.结构函数法评估漏源电压对AlGaAs/InGaAs PHEMTs热阻的影响[J].半导体学报,2014,35(9):094006-5. |
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| 作者姓名： | 马琳 冯士维 张亚民 邓兵 岳元 |
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| 基金项目： | 国家自然科学基金;市自然科学基金；中国广东战略新兴产业工程；北京工业大学博士创新基金 |
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| 摘 要： | 本文通过实验测量和仿真研究了不同漏源电压对AlGaAs/InGaAs PHEMTs热阻的影响。结果表明，等功率下，热阻随着漏源电压的减小呈下降趋势，并且小电压大电流下热阻值最小。应用结构函数法可以分别提取出芯片级和封装级的热阻值。模拟结果表明，沟道中电场最强的地方出现在靠近漏一侧的栅边缘，相对较小的漏源电压产生的电场也较低，这就是导致等功率下热阻随漏源电压下降的原因。
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| 关 键 词： | AlGaAs/InGaAs PHEMTs，结构函数法，热阻，漏源电压 |
| 修稿时间： | 4/8/2014 12:00:00 AM |
Evaluation of the drain-source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method |
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| Ma Lin,Feng Shiwei,Zhang Yamin,Deng Bing and Yue Yuan.Evaluation of the drain-source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method[J].Chinese Journal of Semiconductors,2014,35(9):094006-5. |
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| Authors: | Ma Lin Feng Shiwei Zhang Yamin Deng Bing and Yue Yuan |
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| Affiliation: | Institute of Semiconductor Device Reliability Physics, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China;Institute of Semiconductor Device Reliability Physics, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China;Institute of Semiconductor Device Reliability Physics, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China;Institute of Semiconductor Device Reliability Physics, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China;Institute of Semiconductor Device Reliability Physics, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China |
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| Abstract: | The effect of drain-source voltage on AlGaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that AlGaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain-source voltage (VDS) is decreased. Moreover, the relatively low VDS and large drain-source current (IDS) result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low VDS leads to a relatively low electric field, which leads to the decline of the thermal resistance. |
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| Keywords: | AlGaAs/InGaAs PHEMTs structure function method thermal resistance drain-source voltage |
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