|
|||||
|
|
Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics |
|
| Authors: | B. Deng G. He X. S. Chen X. F. Chen J. W. Zhang M. Liu J. G. Lv Z. Q. Sun |
| Affiliation: | 1. School of Physics and Materials Science, Anhui University, Hefei, 230601, People’s Republic of China 2. National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai, 200083, People’s Republic of China 3. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People’s Republic of China 4. Department of Physics and Electronic Engineering, Hefei Normal University, Hefei, 230061, People’s Republic of China |
| Abstract: | High-k gate dielectric HfO2 thin films have been deposited on Si and quartz substrates by radio frequency magnetron sputtering. The structural characteristics, surface morphology, and optical properties of the HfO2/Si gate stacks at various post-annealing temperatures were examined by X-ray diffraction (XRD), atomic force microscopy (AFM), fourier transform infrared spectroscopy (FTIR), ultraviolet–visible spectroscopy (UV–Vis spectroscopy), and spectroscopic ellipsometry (SE). XRD measurement indicates that the 80 W-deposited HfO2 films demonstrate a polycrystalline structure. AFM measurements illustrate that the root mean square of the HfO2 thin films demonstrates an apparent increase with increasing the annealing temperature. Analysis from FTIR indicates that the Si–O–Si bonds vibration peak position shift toward lower wave numbers with increasing the annealing temperature. Combined with UV–Vis spectroscopy and SE measurements, it can be noted reduction in band gap with an increase in annealing temperature has been confirmed. Additionally, increase in refractive index (n) has been confirmed by SE. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |