| 电子辐照对半导体器件反向击穿电压的影响 |
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| 引用本文： | 许志祥.电子辐照对半导体器件反向击穿电压的影响[J].核技术,1991(4). |
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| 作者姓名： | 许志祥 |
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| 作者单位： | 上海整流器总厂 |
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| 摘 要： | 虽然电子辐照会使P-N结中的自由载流子浓度减少,P-N结宽度增加,但其反向漏电流也随之增加,最终使P-N结反向击穿电压略有下降;对晶体管和晶闸管,由于辐照使其电流放大系数下降,最终其反向击穿电压却略有增加。
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| 关 键 词： | 电子辐照 反向击穿电压 二极管 晶体管 晶闸管 |
Influence of electron irradiation on backward breakdown voltage of semiconductor devices |
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| Xu Zhixiang.Influence of electron irradiation on backward breakdown voltage of semiconductor devices[J].Nuclear Techniques,1991(4). |
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| Authors: | Xu Zhixiang |
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| Affiliation: | Shanghai Rectifier Plant |
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| Abstract: | Influence of electron irradiation on backward breakdown voltage of semiconductor devices was discussed. The experimental results showed that avalanche breakdown voltage for diodes fell slightly while it rose a little for power transistors and thyristors. |
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| Keywords: | Electron irradiation Backward breakdown voltage Diode Transistor Thyristor |
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