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基于SoC微功耗驱动的高性能欠压脱扣器研究与设计
引用本文:吴志祥,彭颖,蒋文贤,邹世伟. 基于SoC微功耗驱动的高性能欠压脱扣器研究与设计[J]. 低压电器, 2014, 0(18): 25-28
作者姓名:吴志祥  彭颖  蒋文贤  邹世伟
作者单位:1. 常州工学院,江苏常州,213002
2. 江苏国星电器有限公司,江苏常州,213177
基金项目:江苏省自然科学基金项目(BK2013245):常州市知识产权计划项目
摘    要:在对现有欠压脱扣器设计方案评估的基础上,通过优化主回路结构,提出了一种高性能电磁型欠压脱扣器设计方案。结合该方案,就主电路、电压信号检测、So C微功耗控制技术等主要问题展开了讨论。试验结果表明,该方案电路自身整体功耗仅为毫瓦级水平,动作点误差小于±0.5 V,成本低廉。

关 键 词:欠压脱扣器  可靠性  So  C  微功耗

Research and Design of Micro-Power Consumption Driven High-Performance Undervoltage Release Based on SoC
WU Zhixiang,PENG Ying,JIANG Wenxian,ZOU Shiwei. Research and Design of Micro-Power Consumption Driven High-Performance Undervoltage Release Based on SoC[J]. Low Voltage Apparatus, 2014, 0(18): 25-28
Authors:WU Zhixiang  PENG Ying  JIANG Wenxian  ZOU Shiwei
Affiliation:WU Zhixiang,PENG Ying,JIANG Wenxian,ZOU Shiwei (1. Changzhou Institute of Technology, Changzhou 213002, China; 2. Jiangsu Guoxing Electrical Co. ,Ltd. , Changzhou 213177, China)
Abstract:This paper put forward a new design scheme of electromagnetic undervoltage release by optimizing the structure of main circuit. Combined with the scheme,the main questions like main circuit,voltage signal detection and So C( system on chip) micro-power consumption control technology were discussed. The experiments show that the new scheme has the advantages that the overall power consumption of the new scheme circuit itself is only milliwatts and the error of action point is less than ± 0. 5 V,while the cost is quite low.
Keywords:undervoltage release  reliability  So C(system-on-chip)  micro-power consumption
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