| 微波功率SiGe HBT的温度特性 |
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| 引用本文： | 杨经伟,张万荣,金冬月,邱建军,高攀.微波功率SiGe HBT的温度特性[J].半导体学报,2006,27(13):231-234. |
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| 作者姓名： | 杨经伟 张万荣 金冬月 邱建军 高攀 |
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| 作者单位： | 北京工业大学电子信息与控制工程学院，北京 100022;北京工业大学电子信息与控制工程学院，北京 100022;辽宁大学物理系，沈阳 110036;北京工业大学电子信息与控制工程学院，北京 100022;北京工业大学电子信息与控制工程学院，北京 100022 |
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| 摘 要： | 通过研究SiGe异质结双极型晶体管(HBT)的温度特性，发现SiGe HBT的发射结正向电压随温度的变化率小于同质结Si双极型晶体管(BJT). 在提高器件或电路热稳定性时，SiGe HBT可以使用比Si BJT更小的镇流电阻.同时SiGe HBT共发射级输出特性曲线在高电压大电流下具有负阻特性，而负阻效应的存在可以有效地抑制器件的热不稳定性效应，从而在温度特性方面证明了SiGe HBT更适合于微波功率器件.
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| 关 键 词： | SiGe HBT 温度特性 微波功率晶体管 |
Temperature Characteristics of Microwave Power SiGe HBTs |
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| Yang Jingwei,Zhang Wanrong,Jin Dongyue,Qiu Jianjun and Gao Pan.Temperature Characteristics of Microwave Power SiGe HBTs[J].Chinese Journal of Semiconductors,2006,27(13):231-234. |
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| Authors: | Yang Jingwei Zhang Wanrong Jin Dongyue Qiu Jianjun and Gao Pan |
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| Affiliation: | College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100022,China;College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100022,China;Physics Department,Liaoning University,Shenyang 110036,China;College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100022,China;College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100022,China |
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| Abstract: | Temperature characteristics of SiGe HBT are studied.Experiment data show that the variation of VBE with temperature of SiGe HBT is smaller than that of homo-junction silicon BJT.The needed emitter ballast resistance in SiGe HBT is thus smaller than that in Si BJT when thermal stability of transistors is improved.At the same time,the negative differential resistance characteristics of SiGe HBT is also observed at a high collector-emitter voltage and high current,which can prevent the thermal instability of power transistors effectively,and this is not the case with Si devices.Therefore,SiGe HBT is proved to be more suitable for microwave power devices. |
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| Keywords: | SiGe HBT temperature characteristics microwave power transistor |
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