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Effect of Long-Term Heat Treatment on the Acceptor Behavior of Gold in Silicon |
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| Authors: | Yu. A. Bykovskii G. M. Voronkova V. V. Grigor'ev V. V. Zuev A. V. Zuev A. D. Kiryukhin A. V. Karelin V. I. Chmyrev S. A. Shcherbakov |
| Affiliation: | (1) Moscow Engineering Physics Institute (Technical University), Kashirskoe sh. 31, Moscow, 115409, Russia;(2) Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia;(3) Institute of Microprocessor Computing Systems, Russian Academy of Sciences, Nakhimovskii pr. 36/1, Moscow, 117997, Russia |
| Abstract: | Data are presented on the electrical activity of Au in Czochralski Si heat-treated and diffusion-doped under various conditions. The results are interpreted in terms of force fields responsible for changes in the concentration of electrically active centers. Long-term heat treatment between 700 and 1050°C is shown to have a significant effect on the acceptor behavior of Au in diffusion-doped Si. The concentration of Au acceptors is sensitive to the surface condition in the course of heat treatment: a tungsten coating increases the Au concentration in the bulk of diffusion-doped Si. |
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