Oriented growth of thin films of samarium oxide by MOCVD |
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Authors: | K Shalini S A Shivashankar |
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Affiliation: | (1) Materials Research Centre, Indian Institute of Science, 560 012 Bangalore, India |
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Abstract: | Thin films of Sm2O3 have been grown on Si(100) and fused quartz by low-pressure chemical vapour deposition using an adducted β-diketonate precursor.
The films on quartz are cubic, with no preferred orientation at lower growth temperatures (∼ 550°C), while they grow with
a strong (111) orientation as the temperature is raised (to 625°C). On Si(100), highly oriented films of cubic Sm2O3 at 625°C, and a mixture of monoclinic and cubic polymorphs of Sm2O3 at higher temperatures, are formed. Films grown on either substrate are very smooth and fine-grained. Infrared spectroscopic
study reveals that films grown above 600° C are free of carbon. |
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Keywords: | MOCVD thin films β -diketonate samarium oxide gate dielectric |
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