MOS Characteristics of synthesized HfAlON-HfO/sub 2/ stack using AlN-HfO/sub 2/ |
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| Authors: | Chang Seo Park Byung Jin Cho Dim-Lee Kwong |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore; |
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| Abstract: | We demonstrate a top-surface aluminized and nitrided HfO/sub 2/ gate dielectric using a synthesis of ultrathin aluminum nitride (AlN) and HfO/sub 2/. The reaction of AlN with HfO/sub 2/ through a subsequent high-temperature annealing incorporates Al and N into an HfO/sub 2/ layer, which results in a synthesis of HfAlON near the top surface of HfO/sub 2/, forming an HfAlON-HfO/sub 2/ stack structure. This approach suppresses interfacial layer growth and improves thermal stability of the dielectric, resulting in significant improvement in leakage current. It also shows no adverse effects caused by N and Al incorporation at the bottom interface. |
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