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A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain
Authors:Hsiao-Wen Zan Ting-Chang Chang Po-Sheng Shih Du-Zen Peng Po-Yi Kuo Tiao-Yuan Huang Chun-Yen Chang Po-Tsun Liu
Affiliation:Inst. of Electro-Opt. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan;
Abstract:With selectively-deposited tungsten film grown on source/drain regions, the parasitic source/drain resistance of thin-channel polycrystalline silicon (poly-Si) thin film transistors can be greatly reduced, leading to the improvement of device driving ability. After extracting the parasitic resistance from characteristics of devices with different channel length, the influences of parasitic resistance on device performances were discussed. A physically-based equation containing the parasitic resistance effects was derived to explain the behavior of linear transconductance under high gate voltage. Good agreements were found between calculated and measured data for both the thin-channel devices with or without tungsten-clad source/drain structure.
Keywords:
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