| 烧结温度对反应烧结碳化硅组织与性能的影响 |
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| 引用本文： | 巫红燕,张国军,王伟春.烧结温度对反应烧结碳化硅组织与性能的影响[J].粉末冶金技术,2017,35(5). |
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| 作者姓名： | 巫红燕 张国军 王伟春 |
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| 作者单位： | 1. 浙江机电职业技术学院材料技术系,杭州,310053;2. 浙江立泰复合材料股份有限公司,湖州,313219 |
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| 摘 要： | 本文研究了1450、1550、1650℃不同烧结温度制备的反应烧结SiC材料的密度、硬度、抗弯强度、显微组织、显微硬度及断裂行为。结果表明:烧结温度对材料密度影响较小。低温反应烧结的SiC晶粒的晶体结构不够完整,存在亚晶界等缺陷,晶粒强度较低,烧结材料的硬度和抗弯强度较低。高温反应烧结的SiC晶粒的晶体结构完整性增加,晶粒强度较高,烧结材料的硬度和抗弯强度较高。因此为了提高反应烧结碳化硅的力学性能,应该适当提高烧结温度或延长烧结时间。
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| 关 键 词： | 反应烧结 SiC 烧结温度 硬度 弯曲强度 |
Effects of sintering temperature on microstructure and properties of reaction bonded silicon carbide |
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| WU Hong-yan,ZHANG Guo-jun,WANG Wei-chun.Effects of sintering temperature on microstructure and properties of reaction bonded silicon carbide[J].Powder Metallurgy Technology,2017,35(5). |
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| Authors: | WU Hong-yan ZHANG Guo-jun WANG Wei-chun |
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| Abstract: | The effects of sintering temperature on density, hardness, flexural strength, microstructure, micro hardness, and fracture behavior of reaction bonded silicon carbides (RB SiC) were studied. The results show that, the density changes little while the hardness / micro hardness and flexural strength are apparently increased with sintering temperature going up from 1450℃, 1550℃, to 1650℃. It is explained that, according to the microstructure and fracture behavior of SiC grain, the crystalline or grain integrity of SiC is improved. To improve the properties of reaction bonded silicon carbide, it is appropriate to sinter the green compact at higher temperature or prolong the sintering time. |
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| Keywords: | reaction bonding SiC sintering temperature hardness flexural strength |
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