| 硅上后热氧化钛膜制备氧化钛及其电学特性 |
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| 引用本文： | 朱晖文,赵柏儒,刘晓彦,康晋锋,韩汝琦. 硅上后热氧化钛膜制备氧化钛及其电学特性[J]. 半导体学报, 2002, 23(4): 337-341. DOI: 10.3969/j.issn.1674-4926.2002.04.001 |
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| 作者姓名： | 朱晖文 赵柏儒 刘晓彦 康晋锋 韩汝琦 |
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| 作者单位： | 1. 北京大学微电子学研究所,北京,100871;2. 中国科学院物理研究所,北京,100080 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 采用在硅上磁控溅射金属钛膜再热氧化的工艺制备了多晶氧化钛薄膜.测量了Ag/TiOx/Si/Ag电容器的I-V和C-V特性.结果表明,氧化钛薄膜的厚度为150～250nm,其介电常数是40～87.随着氧化时间的缩短,氧化钛薄膜中的固定电荷减少,漏电特性得到改善.
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| 关 键 词： | 高k材料 热氧化 直流磁控溅射 |
Fabrication and Electrical Properties of Titanium Oxide by Thermally Oxidizing Titanium on Silicon |
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| Zhu Huiwen,Zhao Bairu,Liu Xiaoyan,Kang Jinfengand Han Ruqi. Fabrication and Electrical Properties of Titanium Oxide by Thermally Oxidizing Titanium on Silicon[J]. Chinese Journal of Semiconductors, 2002, 23(4): 337-341. DOI: 10.3969/j.issn.1674-4926.2002.04.001 |
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| Authors: | Zhu Huiwen Zhao Bairu Liu Xiaoyan Kang Jinfengand Han Ruqi |
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| Affiliation: | Zhu Huiwen1,Zhao Bairu2,Liu Xiaoyan1,Kang Jinfeng1and Han Ruqi1 |
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| Abstract: | Polycrystalline titanium oxide films are fabricated on silicon by thermally oxidizing titanium.The current-voltage and capacitance-voltage characteristics of the Ag/TiOx/Si/Ag capacitors are measured.The thickness of the titanium oxide films arranges from 150nm to 250nm,and their dielectric constants are within 40～87.As the oxidation time is shortened,the fixed charges of the titanium oxide films become less and the leakage current characteristics become better. |
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| Keywords: | high k m aterials therm ally oxidation DC m agnetron sputtering |
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