Impact of metal work function on memory properties of charge-trap flash memory devices using fowler-nordheim P/E mode |
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| Authors: | Sanghun Jeon Jeong Hee Han Junghoon Lee Sangmoo Choi Hyunsang Hwang Chungwoo Kim |
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| Affiliation: | Samsung Adv. Inst. of Technol., Gyunggi-Do, South Korea; |
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| Abstract: | This letter reports the impact of metal work function (/spl Phi//sub M/) on memory properties of charge-trap-Flash memory devices using Fowler-Nordheim program/erase mode. For eliminating electron back tunneling and hole back tunneling through the blocking oxide during an program/erase operation, a gate with /spl Phi//sub M/ of 5.1-5.7 eV on an Al/sub 2/O/sub 3/-SiN-SiO/sub 2/ (ANO) stack is necessary. Compared to a thickness optimized n/sup +/ poly-Si/ONO stack, a high-work-function gate on an ANO stack shows dramatic improvements in retention versus minimum erase state. |
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