XRD and SEM studies of reactively deposited tin oxide thin films |
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Authors: | Johny T Abraham Peter Koshy V K Vaidyan P S Mukherjee P Guruswamy L Prasanna Kumari |
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Affiliation: | (1) Regional Research Laboratory CSIR, 695 019 Pappanamcode, Trivandrum, India;(2) Department of Physics, University of Kerala, 695 581 Kariavattom, Trivandrum, India |
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Abstract: | Stoichiometric polycrystalline tin oxide thin films were deposited by the reactive evaporation of tin and the SnO2 formation was found to be strongly dependent on the deposition parameters. The preferred orientation of the SnO2 films deposited on different substrates was varying due to the dislocation defects arising during the thin film formation.
The X-ray diffraction (XRD) studies identified a tetragonal structure while the scanning electron microscopic (SEM) studies
revealed a polycrystalline surface for the SnO2 films reactively deposited. |
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Keywords: | Tin oxide reactive evaporation tetragonal dislocation defects recrystallization |
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