HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature |
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| Authors: | L A Almeida N K Dhar M Martinka J H Dinan |
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| Affiliation: | (1) E-OIR Measurements, Inc., USA;(2) Army Research Laboratory, USA;(3) Night Vision & Electronic Sensors Directorate, USA |
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| Abstract: | The technique of spectroscopic ellipsometry (SE) has been utilized to monitor in real-time and precisely control the surface
temperature of Hg1−xCdxTe during molecular beam epitaxy. Due to the temperature dependence of the Hg sticking coefficient under Hg-deficient growth
conditions, the near-surface composition of an epilayer is extremely sensitive to surface temperature. SE data were acquired
in real time and modeled using a previously established library of dielectric functions of Hg1−xCdxTe as a function of composition. Utilizing SE-generated compositional profiles as a guide, substrate heating power was adjusted
in such a way as to minimize composition transients. To demonstrate the effectiveness of the technique, we have used SE to
control the temperature of HgCdTe epilayer surfaces during deposition on three-inch (211)CdZnTe/ZnTe/Si composite substrates
mounted on indium free holders. |
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| Keywords: | Spectroscopic ellipsometry temperature control HgCdTe Si substrates molecular beam epitaxy |
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