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Lateral photoconductivity in structures with Ge/Si quantum dots |
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| Authors: | V Yu Panevin A N Sofronov L E Vorobjev D A Firsov V A Shalygin M Ya Vinnichenko R M Balagula A A Tonkikh P Werner B Fuhrman G Schmidt |
| Affiliation: | 1. St. Petersburg State Polytechnical University, St. Petersburg, 195251, Russia 2. Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany 5. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia 3. Martin-Luther-Universit?t Halle-Wittenberg, Interdisziplin?res Zentrum für Materialwissenschaften (IZM), Heinrich-Damerow-Str., 4, D-06120, Halle (Saale), Germany 4. Martin-Luther-Universit?t Halle-Wittenberg, Institut für Physik, Von-Danckelmann-Platz 3, D 06120, Halle (Saale), Germany |
| Abstract: | The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent spectral features related to the transitions of holes from the quantum dot (QD) ground state are revealed in the optical spectra. Temperature photoconductivity quenching caused by the reverse trapping of nonequilibrium free holes by the QD bound state is observed. The obtained experimental data make it possible to determine the height of the surface band bending at the QD heterointerface. |
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