Growth and characterization of HfO2 high-k gate dielectric films by laser molecular beam epitaxy (LMBE) |
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Authors: | Y K Lu X F Chen W Zhu R Gopalkrishnan |
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Affiliation: | (1) Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore;(2) Institute of Microelectronics, Singapore, 117685, Singapore |
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Abstract: | The HfO2 gate dielectric films were fabricated by the laser molecular beam epitaxy (LMBE) technique. High-resolution transmission
electron microscopy (HRTEM) observation showed that under optimized condition, there is no detectable SiO2 interfacial layer in the as-deposited film and a SiO2 interfacial layer of about 0.4 nm was formed at the Si interface due to the post deposition annealing. Capacitance–voltage
(C–V) measurement of the film revealed that the equivalent oxide thickness was about 1.3 nm. Such a film showed very low leakage
current density of 1.5 × 10−2 A cm−2 at 1 V gate bias from the current–voltage (I–V) analysis. The conduction mechanisms as a function of temperature T and electric field E were also systematically studied. |
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