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Photoelectric properties of Se-doped Cd1.23Zn1.77As2 crystals |
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| Authors: | A I Belogorokhov I S Zakharov A F Knyazev A V Kochura |
| Affiliation: | (1) State Research Institute for the Rare-Metals Industry, Bol’shoi Tolmachevskii per. 5, 109017 Moscow, Russia;(2) Kursk State Technical University, ul. 50 Let Oktyabrya 94, 305019 Kursk, Russia;(3) Kursk State Pedagogical University, ul. Radishcheva 33, 305004 Kursk, Russia |
| Abstract: | The spectral response of the photocurrent through Se-dopedCd 1.23 Zn 1.77 As 2 single crystals was studied. The results were used to determine the band gap at absolute zero (0.540 eV) and the temperature coefficient of band gap (-0.39 meV/K). The photocurrent spectra were found to contain a photovoltaic peak attributable to Schottky barriers at the interface between the semiconductor and the metallic contact. The heights of the barriers responsible for residual conductivity were evaluated using a two-barrier model. Both surface and bulk inhomogeneities were shown to play a significant part in residual conductivity. |
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