| 杂质和缺陷对非掺半绝缘LECGaAs霍耳测量的影响 |
| |
| 引用本文： | 杨瑞霞 付浚. 杂质和缺陷对非掺半绝缘LECGaAs霍耳测量的影响[J]. 半导体杂志, 2000, 25(4): 5-11 |
| |
| 作者姓名： | 杨瑞霞 付浚 |
| |
| 作者单位： | 河北工业大学,天津 |
| |
| 摘 要： | 研究了非掺杂半绝缘ＬＥＣ ＧａＡｓ霍耳参数温度关系，研究结果表明，杂 缺陷的不均匀分布引起的电势波动对霍耳测量结果有明显影响，存在电势波动的情况下，仅用霍耳测量不能测定真实的自由载流子浓度和费米能级位置。
|
| 关 键 词： | 非掺杂半绝缘LEC 霍耳测量 砷化镓 杂质 缺陷 |
Effect of Nonuniformity in Distributions of Impurities and Defects on Measurement of Hall Data for Undoped Semi-insulating LEC GaAs |
| |
| YANG Rui xia,FU Jun,YU Ming,YU Hai xia,ZHANG Fu qiang. Effect of Nonuniformity in Distributions of Impurities and Defects on Measurement of Hall Data for Undoped Semi-insulating LEC GaAs[J]. , 2000, 25(4): 5-11 |
| |
| Authors: | YANG Rui xia FU Jun YU Ming YU Hai xia ZHANG Fu qiang |
| |
| Abstract: | The temperature dependence of the Hall data was studied for undoped semi-insulating LEC GaAs. It was found that the potential fluctuations due to the nonuniformity of impurities and defects have a considerable effect on the Hall measurement. In the presence of the potential fluctuation, the exact carrier concentration and the Fermi level position can't be determined by solely Hall measuement. |
| |
| Keywords: | Undoped Semi-insulating LEC GaAs Potential Fluctuation Hall Measureme |
| 本文献已被 CNKI 维普 等数据库收录！ |
