A method for creating reliable and low-resistance contacts between carbon nanotubes and microelectrodes |
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| Authors: | Changxin Chen Liyue Liu Eric Siu-Wai Kong Xinjun Sheng |
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| Affiliation: | a National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, China
b Advanced Electronics Manufacturing Center (AEMC), School of Mechanical Engineering, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, China |
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| Abstract: | An ultrasonic bonding technique has been developed for bonding single wall carbon nanotubes (SWNTs) onto metal microelectrodes. The bonding was formed by pressing SWNTs against the electrodes with a vibrating press at an ultrasonic frequency. With this technology, low-resistance contacts are achieved between both metallic and semiconducting SWNTs and electrodes. After bonding, the effective Schottky barrier height between semiconducting SWNT and Ti electrode is as low as ∼6.6 meV in the ON-state and the barrier width is ∼0.9 nm at Vg = 0. The performance of carbon nanotube field-effect transistors (FETs) fabricated by this ultrasonic bonding technique is also significantly improved, with a transconductance as high as 3.4 μS for solid-state back-gate individual nanotube FETs. |
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