具有应变沟道及EOT 1.2nm高性能栅长22nm CMOS器件

深入研究了亚30nm CMOS关键工艺技术，特别是提出了一种新的低成本的提高空穴迁移率的技术--Ge预非晶化S/D延伸区诱生沟道应变技术，它使栅长90nm pMOS空穴有效迁移率在0.6MV/cm电场下提高32%. 而且空穴有效迁移率的改善，随器件特征尺寸缩小而增强. 利用零阶劳厄线衍射的大角度会聚束电子衍射分析表明，在沟道区相应的压应变为-3.6%. 在集成技术优化的基础上，研制成功了高性能栅长22nm应变沟道CMOS器件及栅长27nm CMOS 32分频器电路（其中分别嵌入了57级/201级环形振荡器）, EOT为1.2nm,具有Ni自对准硅化物.

High Performance Gate Length 22nm CMOS Device withStrained Channel and EOT 1.2nm

As scaling CMOS device towards sub-30nm gate length,device physics and semiconductor technology will encounter a series of barriers.This paper deeply investigates sub-30nm CMOS key process technologies,especially offers a new low-cost technique for enhancement of hole mobility using strained channel by Ge pre-amorphization implantation (PAI) for S/D extension to overcome the serious short channel effect (SCE) and to improve drive current/off state leakage ratio,which makes 32% hole effective mobility improvement at 0.6MV/cm vertical field for 90nm gate length pMOS.And the hole mobility enhancement strengthens with the scaling down of feature size of the device.The analysis using zero order Laue Zone diffraction on large angle convergent beam electron diffraction (LACBED) in TEM reveal very large compressive strain of -3.6% (gate length 75nm) in the channel region induced by Ge PAI for S/D extension.Based on the optimum of integration technology,high performance gate length 22nm CMOS devices and gate length 27nm CMOS 32 frequency dividers embedded with 57 stage/201 stage CMOS ring oscillator with strained channel are fabricated successfully with EOT 1.2nm and Ni-SALICIDE.