用于可编程器件的MTM反熔丝特性研究

基于ONO（Oxide-Nitride-Oxide）和MTM（Metal-to—Metal）反熔丝技术的可编程存储及逻辑器件已经广泛应用于空间技术中。MTM反熔丝以其单元面积小、集成度高、反熔丝电容小和编程后电阻小等优势，更加适合深亚微米集成电路。文章通过制备MTM反熔丝单元，对单元的击穿特性和漏电性能展开研究，给出了反熔丝单元漏电流与单元尺寸的关系，对单元的编程电流和编程后的电阻值关系进行了研究，与文献[1]给出的Ron=Vf/Ip的关系基本一致。

Study of Metal-to-Metal Antifuse Characteristics for Field Programmable Gate Array Devices

Field programmable gate array and memory devices based on oxide-nitride-oxide and metal-tometal antifuse are extensively applied to space technologies. Metal-to-metal antifuse technology can keep pace with standard CMOS process better than oxide-nitride-oxide antifuse technology because of its smaller cell area, more integration, smaller capacitance, and smaller resistance after programming. In this paper, the characteristics of breakdown and leakage current of metal-to-metal antifuse cell were measured, and the relationships of leakage current and cell area were given. Our programmed metal-to-metal cell resistance is nearly consistent to Ron=Vf/Ip of document [1].