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退火对氧敏CeO2—x薄膜结构及电子组态的影响
引用本文:杜新华,刘振祥,谢侃,王燕斌,褚武扬.退火对氧敏CeO2—x薄膜结构及电子组态的影响[J].材料研究学报,1998,12(6):610-614.
作者姓名:杜新华  刘振祥  谢侃  王燕斌  褚武扬
作者单位:北京科技大学(杜新华,王燕斌,褚武扬),中国科学院物理研究所表面物理国家重点实验室(刘振祥,谢侃)
基金项目:福特-中国发展研究基金!09415106
摘    要:用射频磁控溅射法制备了CeO2-x高温氧敏薄膜,用Ce3d的XPS谱计算了Ce^3+浓度,研究了退火条件对氧敏CeO2-x薄膜的晶体结构及电子组态的影响,XRD和AFM分析表明,薄膜经973K至1373退火后,形成了CaF2型结构的CeO2-x其晶粒大小明显依赖于退火条件和膜厚,退火温度在973K至1173K时(200)晶面是择优取向的,在1373退化4h后,可得到热力学稳定的CeO2-x在退火前

关 键 词:二氧化铈  薄膜  晶体结构  退火  电子组态
收稿时间:1998-12-25
修稿时间:1998-12-25

EFFECT OF ANNEALLING ON STRUCTURE AND ELECTRONIC COMPOSITION OF OXYGEN SENSITIVE CeO_(2-x) FILMS
DU Xinhua,LIU Zhedriang,XIE Kan,WANG Yanbin,CHU Wuyang.EFFECT OF ANNEALLING ON STRUCTURE AND ELECTRONIC COMPOSITION OF OXYGEN SENSITIVE CeO_(2-x) FILMS[J].Chinese Journal of Materials Research,1998,12(6):610-614.
Authors:DU Xinhua  LIU Zhedriang  XIE Kan  WANG Yanbin  CHU Wuyang
Affiliation:DU Xinhua,LIU Zhedriang,XIE Kan,WANG Yanbin,CHU Wuyang(University of Science and Technology,Beijing )( Institute of Physics,The Chinese Academy of Sciences,Beijing )
Abstract:The CeO2-x films are deposited from a sintered CeO2-x ceramic target by reactive high frequency sputtering magnetron system. Influence of annealling process on the composition and Structure of CeO2-x films were determined by XRD, AFM and XPS. The results showed that the sputtered CeO2-x thin films had achieved a composition closed to stoichiometric and ultimate crystallization after annealling process in air. There were always a small amount of Ce3+ in the films before and after annealling process. The grain sizes depended markedly on the annealled conditions. The annealling process below 1173K caused slightly preferential orientations formed in the (200) direction.The (111)direction was the thermodynamically stable sudece of the films after annealling above 1373K.
Keywords:ceria  thin film  structure  annealling  
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