Resistive-Switching Characteristics of $hbox{Al}/ hbox{Pr}_{0.7}hbox{Ca}_{0.3}hbox{MnO}_{3}$ for Nonvolatile Memory Applications

A systematic study on the switching mechanism of an $hbox{Al}/ hbox{Pr}_{0.7}hbox{Ca}_{0.3}hbox{MnO}_{3}$ (PCMO) device was performed. A polycrystalline PCMO film was deposited using a conventional sputtering method. A thin Al layer was introduced to induce a reaction with the PCMO, forming aluminum oxide $(hbox{AlO}_{x})$. Transmission electron microscopy analysis of the interface between Al and PCMO showed that resistive switching was governed by the formation and dissolution of $hbox{AlO}_{x}$. Some basic memory characteristics, such as good cycle endurance and data retention of up to $hbox{10}^{4}$ s at 125 $^{circ}hbox{C}$, were also obtained. It also showed excellent switching uniformity and high device yield.