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Class AB amplifier with enhanced slew rate and GBW
Authors:M Pilar Garde  Antonio Lopez-Martin  Jose M Algueta  Ramon G Carvajal  Jaime Ramirez-Angulo
Affiliation:1. Department of Electrical, Electronic and Communications Engineering, Public University of Navarra, Pamplona, Spain

Institute of Smart Cities, Public University of Navarra, Pamplona, Spain;2. Department of Electrical, Electronic and Communications Engineering, Public University of Navarra, Pamplona, Spain;3. Department of Electronic Engineering, School of Engineering, University of Seville, Sevilla, Spain;4. Klipsch School of Electrical Engineering, New Mexico State University, Las Cruces, New Mexico, USA

Abstract:The design of a micropower class AB operational transconductance amplifier with large dynamic current to quiescent current ratio is addressed. It is based on a compact and power-efficient adaptive biasing circuit and a class AB current follower using the quasi-floating gate (QFG) technique. The amplifier has been designed and fabricated in a 0.5-μm CMOS process. Simulation and measurement results show a slew rate (SR) improvement factor versus the class A version larger than 4 for the same supply voltage and bias currents, as well as enhanced small-signal performance.
Keywords:analog integrated circuits  class AB circuits  CMOS integrated circuits  current amplifiers  current followers
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