A graded-gap detector of ionizing radiation |
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| Authors: | J Po?ela K Po?eal A ?il?nas V Jasutis L Dapkus A Kinduris V Jucien? |
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| Affiliation: | (1) Institute of Semiconductor Physics, Vilnius, 2600, Lithuania |
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| Abstract: | The current response of AlxGa1?x As graded-gap layers to optical and X-ray radiation was studied. A graded-gap electric field in the 15-µm-thick AlxGa1?x As layers, with x varying from 0 to 0.4, ensures the complete collection of charges generated by ionizing radiation and makes it possible to attain the value of 0.25 A/W for the current-power sensitivity of AlxGa1?x As. In the layers with a lowered doping level of the narrow-gap region of the graded-gap AlxGa1?x As layer, the voltage-power sensitivity to X-ray radiation with energy lower than 15 keV is as high as 1.6×103 V/W in the photovoltaic mode. |
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