| CdS纳米棒的化学浴沉积法制备和机理研究(英文) |
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| 引用本文： | 周婧,赵高凌,杨金坚,韩高荣.CdS纳米棒的化学浴沉积法制备和机理研究(英文)[J].稀有金属材料与工程,2010(Z2). |
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| 作者姓名： | 周婧 赵高凌 杨金坚 韩高荣 |
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| 作者单位： | 浙江大学硅材料国家重点实验室; |
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| 基金项目： | Supported by National Natural Science Foundation of China (50672086) |
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| 摘 要： | 采用化学浴沉积法制备了高纵横比的CdS纳米棒。二苯硫腙(DPTA)作为有机添加剂用于合成CdS纳米棒。用X射线衍射(XRD)和透射电子显微镜(TEM)表征样品的结晶性能和微观结构。XRD结果表明,样品中同时存在六角相和立方相,当pH值为10.5时,六角相CdS的(111)峰的衍射强度最大,同时出现立方相CdS。TEM结果显示,可以通过调节pH值控制CdS纳米晶的形貌,当pH值为10.5时,CdS纳米棒的纵横比最大,直径约50nm,长约3μm。对CdS纳米晶电学性能的研究表明,与用PVA作为添加剂和在纯乙醇中制备的CdS纳米棒相比,用DPTA作为添加剂制备的CdS纳米棒具有更低的电阻值。这是因为DPTA分子中存在2个大π键,有利于电子的传输。还讨论了CdS纳米棒的生长机理和DPTA修饰CdS纳米棒中的电子转移。
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| 关 键 词： | CdS pH值 DPTA 生长机理 |
Preparation and Growth Mechanism of CdS Nanorods via Chemical Bath Deposition |
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| Zhou Jing,Zhao Gaoling,Yang Jinjian,Han Gaorong.Preparation and Growth Mechanism of CdS Nanorods via Chemical Bath Deposition[J].Rare Metal Materials and Engineering,2010(Z2). |
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| Authors: | Zhou Jing Zhao Gaoling Yang Jinjian Han Gaorong |
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| Affiliation: | Zhou Jing,Zhao Gaoling,Yang Jinjian,Han Gaorong (State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China) |
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| Abstract: | CdS nanorods of high aspect ratio were synthesized through the route of chemical bath deposition under a mild condition. Diphenylthiocarbazone (DPTA) was employed as an organic additive for the synthesis of CdS nanorods. The crystalline and microstructure of CdS nanorods were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The XRD patterns indicate the existence of both cubic and hexagonal phases in the samples. The sample with the pH value of 10.5 showed a hexagonal (11... |
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| Keywords: | CdS pH value DPTA growth mechanism |
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